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320 grit silicon carbide sandpaper Fundamentals Explained

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SiC characteristics 10x the breakdown electrical discipline strength of silicon, rendering it doable to configure bigger voltage (600V to thousands of V) power devices by way of a thinner drift layer and higher impurity concentration. Since most of the resistance element of superior-voltage devices is situated while in the drift https://x.com/Anumhsite/status/1809237086651965693

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