Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors. Just one of such specific properties is that gate oxides in SiC-based power devices are typically characterized by a relatively large number of interface states, https://www.quora.com/profile/Trevor-Flatcher-2/Silicon-Carbide-in-wind-power-equipment-applications-Silicon-Carbide-in-Wind-Power-Equipment-Applications-Silicon-Carb