Because of the optimized gate oxide thickness our gate oxide screening is more efficient in comparison to competing SiC MOSFET manufacturers. In addition to superior gate oxide reliability and also a stable, robust system diode is actually a key element of CoolSiC �?MOSFETs when currently being compared to currently available https://www.facebook.com/permalink.php?story_fbid=pfbid0TQxdDrEw2QBDdBiTLRwtSVDMK67p7cEebAmUfcW2zdNWdKoBZhwWHts6KSR8v7fKl&id=61560512640678&__cft__[0]=AZV-rCLoERThtY9mnJfjmIyJ_y2vrCQcGCzMBhe0X-YZ2rYTaYb6_zv1aBK5hOZjfKhnxg8EJohxDLRmvRifez5kCDExFxgysqVKR870UCXbzMvmr0A2aoYqCealfXKKisrd-UtHdnq-V6tozfUXsMxepraMUv7S5Wk-RvxIiYvVH3uzz8zhj0ORJqXlYZmdKDhMcGl9u_g_iGSLkm5OyoRn&__tn__=%2CO%2CP-R